Dual-height cell with variable width power rail architecture

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

Reexamination Certificate

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Details

C257S055000, C257S512000, C257S562000, C257S574000, C257S300000, C257S296000, C257S261000, C257S260000, C376S249000, C376S114000

Reexamination Certificate

active

06838713

ABSTRACT:
A standard cell architecture with a basic cell that spans multiple rows of the standard cell. This multi-row basic cell may be a dual-height cell that spans two rows, or it may span more than two rows. The multi-row basic cell may be intermixed in a standard cell design with smaller, single-height cells for high-density applications. The single-height cells may be used where possible and higher-drive dual-height basic cells where larger transistors are desired. Other multiple height cells may also be included if even more current is desirable. The power rail may include conductors of varying width.

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