Dual gated power electronic switching devices

Details Dual gated power electronic switching devices Dual gated power electronic switching devices

1997-04-28

1999-11-09

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257143, 257149, H01L 21332, H01L 21335, H01L 218232

Patent

active

059819820

ABSTRACT:
A novel semiconductor switching device is disclosed. The switching device is designed and constructed to include, for example, a highly interdigitated cathode/gate structure on both anode and cathode sides. The semiconductor switching device can be multi-loaded on both anode and cathode sides which provides a great deal of flexibility in operation.

REFERENCES:
patent: 3739235 (1973-06-01), Kessler, Jr.
patent: 3978513 (1976-08-01), Terasawa
patent: 4177479 (1979-12-01), DeBruyne et al.
patent: 4536783 (1985-08-01), Miller et al.
patent: 4821083 (1989-04-01), Ogura et al.
patent: 5148253 (1992-09-01), Kimura
patent: 5223442 (1993-06-01), Kitagawa et al.
Charles Belove, Handbook of Modern Electronics and Electrical Engineering, 1986, pp. 339-344.

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