Dual gate tunable oscillator

Oscillators – Solid state active element oscillator – Transistors

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

331177V, 455195, 455318, H03B 500

Patent

active

047032863

ABSTRACT:
A dual gate field effect transistor (FET) is configured as a self-buffering local oscillator of a tuner by arranging the FET in a cascode configuration in which the first gate electrode is coupled to the source electrode through an oscillation conditioning network and also to a frequency determining network, the second gate electrode is coupled to signal ground through a negligible impedance and the drain electrode is utilized as the output of the oscillator.

REFERENCES:
patent: 3723905 (1973-03-01), Sterner et al.
patent: 4458215 (1984-07-01), Huang et al.
patent: 4596955 (1986-06-01), Horvat et al.
Pp. 6-1 thru 6-7 of the book "1982 The Radio Amateur's Handbook", published in 1981.
Pp. 307-310 of the book "Transistor Circuit Design", published by McGraw-Hill in 1963.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dual gate tunable oscillator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual gate tunable oscillator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual gate tunable oscillator will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1274342

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.