Dual gate oxide analog circuit architecture with dual...

Details Dual gate oxide analog circuit architecture with dual... Dual gate oxide analog circuit architecture with dual...

2008-12-05

2010-06-22

Mai, Lam T (Department: 2819)

Coded data generation or conversion

Analog to or from digital conversion

Analog to digital conversion

C326S030000

Reexamination Certificate

active

07741987

ABSTRACT:
An analog circuit architecture is fabricated with dual gate oxides and dual voltage supplies. In the analog circuit architecture, different kinds of devices/transistors with different gate oxide thicknesses are biased by different voltages, such that advantages of each device technology are mixed to enhance total performance of the analog circuit. For example, thin oxide 0.18 um transistors are biased at 1.8V for higher speed and lower power consumption, whereas thick oxide 0.35 um transistors are biased at 3.3V for a wider signal swing range.

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patent: 6509854 (2003-01-01), Morita
patent: 6642543 (2003-11-01), El Gamal et al.
patent: 200507462 (2005-02-01), None

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