Dual-gate gallium arsenide power metal semiconductor field effec

Details Dual-gate gallium arsenide power metal semiconductor field effec Dual-gate gallium arsenide power metal semiconductor field effec

1988-04-21

1989-09-26

James, Andrew J.

357 15, H01L 2980

Patent

active

048704784

ABSTRACT:
A dual-gate gallium arsenide power MESFET chip comprising a source region surrounded by a first gate, a second surrounding the first gate, a drain region juxtaposed to said second gate, and a shorting bar which couples the second gate to the source region. This combination, used in a multi-fingered application, provides a reverse breakdown voltage substantially higher than prior art devices.

REFERENCES:
patent: 4298879 (1981-11-01), Hirano
patent: 4709251 (1987-11-01), Suzuki

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