Dual-gate fet amplifier-mixer with intermediate ohmic island for

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307304, 307529, 307520, 357 51, 333104, H03K 326, H03K 3353

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active

048411698

ABSTRACT:
A dual gate field effect transistor having an intermediate ohmic island between the two transistor halves is connected to operate as an amplifier-mixer for rejecting a frequency band. A paragraph continued series resonant circuit comprising an inductance and a capacitor is connected at one of its ends to the ohmic island of the field effect transistor and at the other end to ground. Polarization voltages are applied to each electrode of the dual-gate transistor so that the first half or part of the transistor extending from the source electrode to the ohmic island is brought into a state of saturation and the second part of the transistor extending from the ohmic island to the drain electrode is brought into a state of non-saturation.

REFERENCES:
patent: 3986060 (1976-10-01), Nishizawa et al.
patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4334324 (1982-06-01), Hoover
patent: 4409557 (1983-10-01), Sechi
IEEE Journal of Solid-State Circuits, Jun. 1969, "Improvement In the Tetrode FET Noise Figure by Neutralization and Tuning" by A. vn der Ziel et al.
Microwave Field-Effect Transistors-Theory, Design and Applications by Raymond S. Pengelly, 1982, pp. 233-244, 44-50.
IEEE Transactions on Electron Devices, vol. ED-25, No. 6, Jun. 1978, "GaAs Dual-Gate MESFET's", Furutsuka et al.
Journal of Physics E:Scientific Intruments (Jan. 1971), vol. 4, M. J. Lazarus et al. "Operation of Dual Gate MOSFET at 77K and Use in RF and Video Amplifiers".

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