Dual gate controlled thyristor with highly doped cathode base gr

Details Dual gate controlled thyristor with highly doped cathode base gr Dual gate controlled thyristor with highly doped cathode base gr

1980-01-04

1981-09-22

Clawson, Jr., Joseph E.

357 20, 357 55, 357 86, H01L 2974

Patent

active

042913250

ABSTRACT:
A gate controlled semiconductor device comprises two main electrode members provided on a wafer having at least one junction formed between two alternately different conductivity typed semiconductive layers and a control electrode member in which the same or a different conductivity typed surface is provided on one layer of the wafer. The control electrode member is provided on the wafer adjacent one of the main electrodes. The control electrode member includes a low resistance layer embedded in one surface of the wafer and consists of a wide bridging portion, a plurality of relatively wide main trunk portions projecting from the bridging portion and a plurality of narrow branch portions branching from the main trunk portions.

REFERENCES:
patent: 3906545 (1975-09-01), Schlanggnotto et al.
patent: 4092703 (1978-05-01), Sueoka et al.

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