Dual gate BCMD pixel suitable for high performance CMOS...

Details Dual gate BCMD pixel suitable for high performance CMOS... Dual gate BCMD pixel suitable for high performance CMOS...

2005-04-19

2005-04-19

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S004000

Reexamination Certificate

active

06882022

ABSTRACT:
A Dual Gate BCMD pixel has a compact size, nondestructive readout; complete reset with no kTC-reset noise generation, anti-blooming protection, and column reset capability. By incorporating a dual gate MOS transistor with an enclosed annular layout into the pixels of image sensing array, and sensing photo-generated charge nondestructively by detecting the transistor threshold voltage variations caused by collected charge, achieves this goal and other objects of the invention.

REFERENCES:
patent: 4556909 (1985-12-01), Yamada
patent: 5317174 (1994-05-01), Hynecek
patent: 5341008 (1994-08-01), Hynecek
patent: 5625210 (1997-04-01), Lee et al.

Affiliated with

Also associated with

Rating

Dual gate BCMD pixel suitable for high performance CMOS... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual gate BCMD pixel suitable for high performance CMOS..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual gate BCMD pixel suitable for high performance CMOS... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3425170