Dual-frequency capacitively-coupled plasma reactor for materials

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723E, C23F 102

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active

056561237

ABSTRACT:
The present invention is directed to a dual frequency capacitively-coupled plasma apparatus for materials processing. According to a first aspect of the present invention, a dual frequency triode reactor includes a VHF (30-300 MHz) RF power supply capacitively coupled to an upper reactor electrode and an HF (0.1-30 MHz) RF power supply capacitively coupled to a lower reactor electrode to which the wafer is attached. The VHF power supply is used to generate and control formation of a low sheath potential, high density plasma for minimum device damage and rapid etching/deposition while the HF power supply is used to provide a DC bias to the wafer substrate. According to a second aspect of the present invention, a tailored, powered upper electrode, at least a portion of which is generally conical in shape, is employed to provide a uniform etch across the diameter of the wafer.

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Andrew A. Chambers, et al., "Etching of Phosphorous Doped Polysilicon Films", Semiconductor International, Jan. 1988, pp. 66-69.

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