Dual etchant process, particularly for gate recess fabrication i

Details Dual etchant process, particularly for gate recess fabrication i Dual etchant process, particularly for gate recess fabrication i

1993-05-28

1995-07-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437912, 437228, H01L 218252

Patent

active

054362016

ABSTRACT:
A semiconductor substrate is etched in a two-step sequence, with two different liquid etchants that have different lateral etch rates. The relative time periods for which the etchants are applied are selected to achieve a close match between the actual etch profile and the desired profile. The process is particularly applicable to the formation of a gate recess in a GaAs MESFET for high power amplification.

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