Dual etch method of defining active area in semiconductor...

Details Dual etch method of defining active area in semiconductor... Dual etch method of defining active area in semiconductor...

2009-09-30

2011-11-01

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

Reexamination Certificate

active

08048764

ABSTRACT:
A method of forming a hardmask for defining shallow trench isolation regions in a semiconductor substrate layer includes the steps of: depositing a hardmask layer over the semiconductor substrate layer; depositing and patterning a first photoresist layer over the hardmask layer; etching the hardmask layer after patterning the first photoresist layer to form an interim hardmask layer having at least one line feature; depositing and patterning a second photoresist layer over the interim hardmask layer; and forming a hardmask, the forming step including etching the interim hardmask layer after patterning the second photoresist layer to define a line end of the at least one line feature.

REFERENCES:
patent: 5308741 (1994-05-01), Kemp
patent: 5916733 (1999-06-01), Koyama
patent: 6121155 (2000-09-01), Yang et al.
patent: 6197687 (2001-03-01), Buynoski
patent: 6204133 (2001-03-01), Yu et al.
patent: 6283131 (2001-09-01), Chen et al.
patent: 6420097 (2002-07-01), Pike et al.
patent: 6482726 (2002-11-01), Aminpur et al.
patent: 6580110 (2003-06-01), Schrems
patent: 7115450 (2006-10-01), Huang et al.
patent: 2002/0045136 (2002-04-01), Fritze et al.
patent: 2002/0081854 (2002-06-01), Morrow et al.
patent: 2005/0164478 (2005-07-01), Chan et al.
patent: 2005/0269602 (2005-12-01), Maruyama et al.
patent: 2009/0081563 (2009-03-01), Wang et al.
patent: 2010/0176479 (2010-07-01), Postnikov et al.

Affiliated with

Also associated with

Rating

Dual etch method of defining active area in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual etch method of defining active area in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual etch method of defining active area in semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4268130