Dual-emitter lateral magnetometer

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

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Details

257426, 257427, H01L 2722, H01L 2982, H01L 4304

Patent

active

055148999

ABSTRACT:
A magnetometer or magnetic field sensor includes semiconductor material deposited laterally on an insulating substrate. The semiconductor material is alternating regions of n- and p-type silicon provided with two cathodes, an anode and a triggering node. Upon application of a triggering pulse to a switch on the sensor, a carrier domain is formed. In the presence of a magnetic field this carrier domain is deflected to one side thus causing an imbalance in the current collected at the two cathodes.

REFERENCES:
patent: 4520413 (1985-05-01), Pictrowski
patent: 4999692 (1991-03-01), Ristic et al.
patent: 5099298 (1992-03-01), Nakamura et al.
Cristoloveanu et al. "Magneto Diodes . . . Magnetic Sensors" Conf. from Elec. to Microelec. Fourth Euro Conf. on Electro technics Eurocon 80 Stuttgart, Germ. 24-28 Mar. 1980.

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