Dual element magnetoresistive sensor with antiparallel magnetiza

Details Dual element magnetoresistive sensor with antiparallel magnetiza Dual element magnetoresistive sensor with antiparallel magnetiza

1996-06-07

1997-12-09

Tupper, Robert S.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 5127

Patent

active

056966547

ABSTRACT:
A dual element magnetoresistive (MR) sensor is disclosed comprising two MR elements separated by a high resistivity conductive spacer material. A layer of hard bias material, which abuts one of the MR elements at each of its track edges, has a magnetization times thickness value substantially matched to that of the one MR element to bias it in one longitudinal direction. An exchange bias layer biases the other MR element by exchange coupling in an opposite longitudinal direction to achieve magnetic stabilization between the MR elements. The exchange bias layer abuts the other MR element at each of its track edges and has a magnetization times thickness value substantially matched to that of the other MR element. Alternatively, the exchange bias layer extends from one track edge to an opposite track edge in continuous underlying or overlying contact with the other MR element.

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Carey, M.J. and Berkowitz, A. E., "Exchange anisotropy in coupled films of Ni.sub.81 Fe.sub.19 with Ni0 and Co.sub.x Ni.sub.1-x 0, " Appl. Phys. Lett. 60 (24), 15 Jun. 1992, pp. 3060-3062.

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