Dual element magnetoresistive sensing head

Details Dual element magnetoresistive sensing head Dual element magnetoresistive sensing head

1992-11-16

1994-05-03

Tupper, Robert S.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 539

Patent

active

053093054

ABSTRACT:
A read/write head includes a dual element MR sensor and a superimposed inductive head. In an implementation of the invention, the MR sensor structure includes two spaced magnetoresistive (MR) elements on which antiferromagnetic (AFe) thin films, preferably of iron manganese, are deposited. The AFe thin films act as exchange bias layers with the MR elements, biasing the MR layers in opposite directions and perpendicular to the surface of a magnetic medium. Recorded magnetic signals are sensed differentially and the output signal is characterized by increased amplitude and improved signal-to-noise ratio.

REFERENCES:
patent: 5132859 (1992-07-01), Andricacos et al.
patent: 5193038 (1993-03-01), Smith

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