Dual electron injection structure and process with self-limiting

Details Dual electron injection structure and process with self-limiting Dual electron injection structure and process with self-limiting

1985-03-25

1987-04-14

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 29591, 357235, 357 54, H01L 2104

Patent

active

046567291

ABSTRACT:
A dual electron injection structure (DEIS) and process for incorporating it into a semi-conductor structure, such as an E2PROM and/or NVRAM, is disclosed. The DEIS includes a composite structure formed from a layer of silicon rich nitride, a layer of silicon dioxide (SiO.sub.2) and a layer of silicon rich oxide. Preferably, a Plasma Enhanced Chemical Vapor Deposit (PECVD) method or a low pressure chemical vapor deposit (LPCVD) method is used to place the DEIS between the Poly 1 and Poly 2 devices of the semi-conductor structure.

REFERENCES:
patent: 4458407 (1984-07-01), Hoeg, Jr. et al.
patent: 4471471 (1984-09-01), DiMaria
patent: 4472726 (1984-09-01), DiMaria
patent: 4486859 (1984-12-01), Hoffman
patent: 4535349 (1985-08-01), Weinberg
DiMaria et al, "Electrically-Alterable Memory Using a DEIS" IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980, pp. 179-181.

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