Dual dielectric structure for suppressing lateral leakage...

Details Dual dielectric structure for suppressing lateral leakage... Dual dielectric structure for suppressing lateral leakage...

2002-02-07

2008-03-04

Landau, Matthew C. (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S096000

Reexamination Certificate

active

07338833

ABSTRACT:
A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.

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