Dual damascene structure formed in a single photoresist film

Details Dual damascene structure formed in a single photoresist film Dual damascene structure formed in a single photoresist film

1999-01-06

2000-07-25

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaged product

Structurally defined

430320, G03F 700

Patent

active

060935081

ABSTRACT:
The present invention is embodied in a process for creating a dual damascene structure. The process includes the steps of forming a photoresist film on a substrate, pattern exposing the photoresist film to form a first pattern in the photoresist film, and forming an etch resistant layer in the first pattern. The resistant layer is resistant to a further pattern exposure and etching. The photoresist film is pattern exposed a second time to form a second pattern in the photoresist film. The sections of the photoresist film corresponding to the second pattern are removed and the substrate is etched to form the second pattern in the substrate. The resistant layer is removed and the substrate is etched to form the first pattern in the substrate. Finally, the remaining photoresist film is removed from the substrate.

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C.A. Spence, S.A. MacDonald and H. Schlosser, "Silyation of Poly (t-BOC) Styrene Resists Resists: Performance and Mechanisms", SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990), pp. 344-357.

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