Dual damascene interconnect structure using low dielectric const

Details Dual damascene interconnect structure using low dielectric const Dual damascene interconnect structure using low dielectric const

1998-03-31

2000-03-14

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257752, 257759, 257762, 257774, H01L 2348

Patent

active

060376643

ABSTRACT:
A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.epsilon.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in which via and trench openings are formed in the low-.epsilon. ILD. The dual damascene technique allows for both the via and trench openings to be filled at the same time.

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