Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-01-03
2010-06-15
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S759000, C257SE21579, C257SE23167
Reexamination Certificate
active
07737561
ABSTRACT:
A dual damascene interconnect structure having a patterned multilayer of spun-on dielectrics on a substrate is provided. The structure includes: a patterned multilayer of spun-on dielectrics on a substrate, including: a cap layer; a first non-porous via level low-k dielectric layer having thereon metal via conductors with a bottom portion and sidewalls; an etch stop layer; a first porous line level low-k dielectric layer having thereon metal line conductors with a bottom portion and sidewalls; a polish stop layer over the first porous line level low-k dielectric; a second thin non-porous via level low-k dielectric layer for coating and planarizing the line and via sidewalls; and a liner material between the metal via and line conductors and the dielectric layers. Also provided is a method of forming the dual damascene interconnect structure.
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Kumar Kaushik A
Malone Kelly
Tyberg Christy S
International Business Machines - Corporation
Morris, Esq. Daniel P.
Ohlandt Greeley Ruggiero & Perle L.L.P.
Weiss Howard
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