Dual damascene bond pad structure for lowering stress and...

Details Dual damascene bond pad structure for lowering stress and... Dual damascene bond pad structure for lowering stress and...

2005-01-04

2005-01-04

Pham, Long (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257S773000, C257S774000, C257S775000, C257S786000

Reexamination Certificate

active

06838769

ABSTRACT:
A bond pad is located over active circuitry formed within an integrated circuit device. A barrier film forms the bottom surface of the upper portion of a bond pad opening which also includes vias extending through the bottom surface to form a dual damascene structure. The bond pad is resistant to stress effects such as cracking, which can be produced when bonding an external wire to the bond pad, and therefore prevents leakage currents between the bond pads and the underlying circuitry.

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