Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-05-03
2005-05-03
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000
Reexamination Certificate
active
06888215
ABSTRACT:
An interconnect structure in which a patterned anti-fuse material is formed therein comprising: a substrate having a first level of electrically conductive features; a patterned anti-fuse material formed on said substrate, wherein said patterned anti-fuse material includes an opening to at least one of said first level of electrically conductive features; a patterned interlevel dielectric material formed on said patterned anti-fuse material, wherein said patterned interlevel dielectric includes vias, as least one of said vias includes a via space; and a second level of electrically conductive features formed in said vias and via spaces.
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Brintzinger Axel C.
Radens Carl J.
Capella Steven
Infineon Technologies
Lewis Monica
Wilczewski Mary
LandOfFree
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