Dual CPP GMR sensor with in-stack bias structure

Details Dual CPP GMR sensor with in-stack bias structure Dual CPP GMR sensor with in-stack bias structure

2004-11-10

2008-10-14

Cao, Allen T (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07436636

ABSTRACT:
A dual current perpendicular to plane (CPP) sensor having an in stack bias structure disposed between first and second free layers. The hard bias structure includes a plurality of magnetic layers antiparallel coupled with one another. At least one of the magnetic layers of the in stack bias structure includes a layer of Ni sandwiched between first and second layer of NiFe. The Ni provides a strong negative magnetostriction that sets the moment of the magnetic layer in a desired direction parallel with the ABS while the NiFe layers at either side of the Ni provide good antiparallel coupling properties, allowing the magnetic layer to be antiparallel coupled with adjacent magnetic layers of the in stack bias structure.

REFERENCES:
patent: 6023395 (2000-02-01), Dill et al.
patent: 6114719 (2000-09-01), Dill et al.
patent: 6671139 (2003-12-01), Carey et al.
patent: 6704175 (2004-03-01), Li et al.
patent: 6741432 (2004-05-01), Pinarbasi
patent: 6751072 (2004-06-01), Freitag et al.
patent: 2003/0062981 (2003-04-01), Hosomi et al.
patent: 2003/0123198 (2003-07-01), Sugawara et al.
patent: 2003/0143431 (2003-07-01), Hasegawa et al.
patent: 2003/0184918 (2003-10-01), Lin et al.
patent: 2003/0184919 (2003-10-01), Lin et al.
patent: 2004/0057162 (2004-03-01), Gill
patent: 2004/0075959 (2004-04-01), Gill
patent: 2004/0085683 (2004-05-01), Lin et al.
patent: 2004/0086751 (2004-05-01), Hasegawa et al.
patent: 2004/0109264 (2004-06-01), Gill
patent: 2005/0068688 (2005-03-01), Sbiaa et al.
patent: 2007/0063237 (2007-03-01), Huai et al.
Jeffrey R. Childress, Michael K. Ho, Robert E. Fontana, Matthew J. Carey, Philip M. Rice, Bruce A. Gurney, and Ching H. Tsang, “Spin-Valve and Tunnel-Valve Structures with In Situ In-Stack Bias,” IEEE Transactions on Magnetics, vol. 38, No. 5, Sep. 2002.

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