Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2005-07-26
2005-07-26
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
C330S285000, C330S288000, C330S289000
Reexamination Certificate
active
06922107
ABSTRACT:
An RF amplifier comprises a power amplifier and a dual bias circuit. A dual bias circuit comprises a constant current source and a constant voltage source for biasing the power amplifier. The power may include a heterojunction bipolar transistor (HBT) or a bipolar junction transistor (BJT).
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patent: 6771129 (2004-08-01), Riishøj et al.
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patent: 6803821 (2004-10-01), DeFalco et al.
patent: 6842075 (2005-01-01), Johnson et al.
DLA Piper Rudnick Gray Cary US LLP
Dynalinear Technologies, Inc.
Nguyen Patricia
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