Dual channel high electron mobility field effect transistor

Details Dual channel high electron mobility field effect transistor Dual channel high electron mobility field effect transistor

1988-07-29

1989-04-11

James, Andrew J.

357 16, 357 55, 357 56, 357 58, 357 53, H01L 2980

Patent

active

048210935

ABSTRACT:
A multi-terminal Group III-V semiconductor high electron mobility field effect transistor comprised of a sandwich of molecular beam epitaxially grown layers and including two high mobility charge flow channels in respective two dimensional electron gas regions implemented, for example, by at least one doped layer of aluminum gallium arsenide adjacent an undoped gallium arsenide layer separated by a heterojunction. A pair of opposing two dimensional electron gas (2DEG) regions are generated in the layer of undoped gallium arsenide by the bending of the energy levels of the semiconductor materials. Charge flow occurs in a unidirectional fashion from one channel to the other in the common undoped gallium arsenide layer under the control of an electric field applied transversely through the structure by means of a top gate electrode and a bottom field plate electrode. Alternatively, the source voltage can be increased until the requisite amount of energy has been provided for the electrons to become "hot" enough to transfer from one channel to the other, in which case a lower biasing contact is not required. Relatively high signal isolation is inherently provided thereby between a pair of output terminals or signal ports. The device, moreover, is operable as a high speed signal coupler, amplifier, mixer as well as a photoelectric detector/amplifier.

REFERENCES:
patent: 4538165 (1985-08-01), Chang et al.
patent: 4593300 (1986-06-01), Shur
patent: 4688061 (1987-08-01), Sakaki
Dingle, "New High-Speed III-V Devices for Integrated Circuits," IEEE Trantions on Electron Devices, vol. ED-31, No. 11, Nov. 1984, pp. 1662-1667.
Morkoc et al., "The HEMT: A Superfast Transistor," IEEE Spectrum, Feb. 1984, pp. 28-35.
Sakaki, "Velocity-Modulation Transistor (VMT)-A New Field-Effect Transistor Concept," Japanese Journal of Applied Physics, vol. 21, No. 6, Jun. 1982, pp. 2381-2382.
A New Field-Effect Transistor with Selectively Doped GaAs
-Al.sub.x Ga.sub.1-x As Heterojunctions, T. Mimura, et al., Japanese Journal of Applied Physics, vol. 19, No. 5, May 1980, pp. 1225-1227.

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