Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-05-26
1995-11-28
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257147, 257151, H01L 2974, H01L 31111
Patent
active
054710758
ABSTRACT:
A semiconductor switching device includes a plurality of adjacent and parallel-connected switching cells in a semiconductor substrate. Each cell includes a thyristor having a floating emitter region and a trench-gate field effect transistor (TFET) for providing turn-on and turn-off control of the thyristor. In one embodiment of the switching device, parasitic thyristor latch-up is suppressed by using a dual-channel TFET which forms both inversion-layer and accumulation-layer channel connections in series between respective floating emitter regions and the cathode contact. In another embodiment, parasitic thyristor latch-up is prevented by joining floating emitter regions of a pair of adjacent cells to thereby eliminate a parasitic P-N-P-N path between the anode and cathode contacts. According to this second embodiment, a dual-channel TFET is preferably used to form a separate first conductivity type inversion-layer channel adjacent a first sidewall of the trench and a second conductivity type inversion-layer channel adjacent a second opposing sidewall of the trench. These channels provide the necessary electrical connections for both gated turn-on and turn-off control.
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Baliga B. Jayant
Korec Jacek
Shekar Mallikarjunaswamy S.
Fahmy Wael M.
North Carolina State University
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