Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-11-21
2006-11-21
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S190000, C257S191000, C257S192000
Reexamination Certificate
active
07138649
ABSTRACT:
A semiconductor structure having a substrate with a surface layer including strained silicon. The surface layer has a first region with a first thickness less than a second thickness of a second region. A gate dielectric layer is disposed over a portion of at least the first surface layer region.
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Currie Matthew T.
Fitzgerald Eugene A.
Lochtefeld Anthony J.
AmberWave Systems Corporation
Gebremariam Samuel A
Goodwin & Procter LLP
Owens Douglas W.
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