Dual-bit memory device having trench isolation material...

Details Dual-bit memory device having trench isolation material... Dual-bit memory device having trench isolation material...

2011-05-24

2011-05-24

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257SE27103

Reexamination Certificate

active

07948052

ABSTRACT:
A dual-bit memory device is provided which includes trench isolation material disposed near bit line contact areas. For example, in one implementation a semiconductor memory device is provided in which each memory cell can store two bits of information. The memory device comprises a substrate, first and second buried bit lines in the substrate, a first bit line contact on the first buried bit line, a second bit line contact on the second buried bit line, and an insulator region disposed in the substrate between the first buried bit line and the second buried bit line. The insulator region prevents a current from flowing between the first buried bit line and the second buried bit line.

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Chang et al. “New Buried Bit-line NAND (BiNAND) Flash Memory for Data Storage.” 2003 Symposium on VLSI Technology Digest of Technical Papers. pp. 95-96.

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