Static information storage and retrieval – Floating gate – Particular connection
Patent
1997-09-24
1999-09-07
Nelms, David
Static information storage and retrieval
Floating gate
Particular connection
36518501, 36518503, G11C 1604
Patent
active
059497114
ABSTRACT:
A dual bit memory cell includes a substrate, a gate unit and left and right diffusions implanted into the substrate on the outer sides of the gate unit such that a channel exists under the gate unit and between the left and right diffusions. The gate unit includes a control gate and left and right separately programmable floating gates located on the left and right sides of the control gate. Each floating gate controls a short portion of the channel. The left diffusion acts as a drain and the right diffusion acts as a source when reading the value stored in the right floating gate and the right diffusion acts as a drain and the left diffusion as a source when reading the value stored in the left floating gate. In one embodiment, the floating gates are formed of polysilicon spacers.
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Nelms David
Nguyen Tuan T.
Waferscale Integration Inc.
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