Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1991-10-28
1994-10-04
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257191, 257582, 257583, 257584, 257586, 257591, 257592, 3072991, 307303, H01L 29161, H01L 29205, H01L 2972
Patent
active
053529111
ABSTRACT:
This invention discloses a dual base heterojunction bipolar transistor for use in a number of different application. Current is introduced into one of the base contacts such that current is forced through the base region of the transistor to the other base contact. Because of the different resistances in the base, there will be a voltage potential between one side of the emitter mesa adjacent one of the base contacts and the other side of the emitter mesa adjacent the other base contact. This lateral voltage potential creates current crowding which forces the current density to travel to the perimeter of the transistor. Because the current travels mostly through the perimeter regions of the transistor, this concept can be used for testing for defects in the bulk of the base region by comparing the current gain without current crowding and with current crowding. Also, this concept can be used strictly as a gain control for a heterojunction bipolar transistor.
REFERENCES:
patent: 4768074 (1988-08-01), Yoshida et al.
patent: 4794440 (1988-12-01), Capasso et al.
patent: 4979009 (1990-12-01), Kusano et al.
patent: 4996166 (1991-02-01), Ohshima
patent: 5027179 (1991-06-01), Yokoyama et al.
R. L. Wallace, Jr., L. C. Schmidt, & E. Dickten, "A Junction Transistor Tetrode for High-Frequency Use", Chapter 7, Tetrodes published in Proc. IRE, vol. 40, No. 1952.
Ngo Ngan
TRW Inc.
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