Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1993-04-08
1995-10-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257191, 257440, 257442, H01L 29161
Patent
active
054573319
ABSTRACT:
A dual-band HgCdTe radiation detector (10) includes a four layer n-p.sup.+ -p-n.sup.+ structure, grown by LPE, upon a substrate (12). The four layers are, from a bottom layer next to the substrate to the surface: (a) a MWIR radiation responsive n-type absorbing layer (14); (b) a p.sup.+ cap layer (16); (c) a LWIR radiation responsive p-type layer (18); and (d) an n+ top layer (20). The n.sup.+ top layer has a compositional profile that is similar to the p-type cap layer. Operation of this structure involves biasing the top layer positive with respect to the bottom layer, which results in the collection of LWIR-generated electrons in the p-type layer. Biasing the top layer negative with respect to the bottom layer results in MWIR-generated holes being collected by the bottom n-p+ junction. In this mode, however, the detector structure rejects collection of LWIR-generated electrons because a compositional profile of the two p-type layers prevents the electrons from drifting to the bottom n-p+ junction and being collected.
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Chapman George R.
Kosai Kenneth
Bowers Courtney A.
Crane Sara W.
Denson-Low W. K.
Santa Barbara Research Center
Schubert W. C.
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