Dual-band CMOS front-end with two gain modes

Amplifiers – With control of power supply or bias voltage – With control of input electrode or gain control electrode bias

Reexamination Certificate

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Details

C220S550000, C220S253000

Reexamination Certificate

active

10914408

ABSTRACT:
A multi-band low noise amplifier (LNA)105includes an input stage having at least two inputs, a first input (103) coupled to a first input transistor for receiving signals in a first frequency band and a second input (104) coupled to a second input transistor for receiving signals in a second frequency band. The second frequency band spaced apart from the first frequency band. A bias network (218) having a band select input is coupled to the first and second input transistor, wherein a signal level applied to the band select input turns on one of the input transistors and turns off the other input transistors. The LNA (105) operates in the first frequency band when the first input transistor is on and the second frequency band when the second input transistor is on. A switched resonator (216) having a control input is provided, wherein application of a control signal to the control input tunes a resonant frequency of the LNA, and provides gain select, for operation in either the first or second frequency band.

REFERENCES:
patent: 5872489 (1999-02-01), Chang et al.
patent: 6639468 (2003-10-01), Belot
patent: 6882223 (2005-04-01), Hsu et al.
patent: 2002/0167355 (2002-11-01), Jones
patent: 2004/0174928 (2004-09-01), Siwiak et al.
patent: 2004/0246051 (2004-12-01), Hsu et al.
patent: 2005/0231290 (2005-10-01), Hung et al.
patent: 1296448 (2003-03-01), None
patent: WO 04/010576 (2004-01-01), None
Seong-Mo Yim and Kenneth K. O., Demonstration of a Switched Resonator Concept in a Dual-Band Monolithic CMOS LC-Tuned VCO, IEEE 2001, p. 206.
Y.C. Ho et al. “3V low noise amplifier implemented using a 0.8um CMOS process with three metal layers for 900MHz operation”, 1996, Elect. Lett., 32(13):1191-93.
X. Li et al. “A comparison of CMOS and SiGe LNA's and mixers for wireless LAN application”, 2001, IEEE Custom Integrated Circuits Conference, pp. 531-534.
D. Shaeffer et al. “A 1.5V, 1.5GHz CMOS Low Noise Amplifier”, 1996, IEEE, pp. 32-33.
Z. Li et al. “A 900-MHz 1.5-V CMOS Voltage-Controlled Oscillator Using Switched Resonators With a Wide Turning Range”, 2003, IEEE, pp. 137-139.

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