Dual antifuse memory device

Static information storage and retrieval – Read only systems – Fusible

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365 94, 365175, G11C 1300

Patent

active

051915502

ABSTRACT:
A semiconductor memory device employing a plurality of antifuse memory elements is disclosed. The memory elements have selected connection portions of two or more elements formed as a unit and are otherwise electrically connected for use without regard to the polarity of the applied voltage. Such two-way antifuse memory elements formed in parallel become a unit thereby reducing occupied area and enhancing device integration.

REFERENCES:
patent: Re33261 (1990-07-01), Baglee et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4605872 (1986-08-01), Rung
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4914055 (1990-04-01), Gordon et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dual antifuse memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual antifuse memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual antifuse memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-131643

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.