Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1988-06-29
1992-04-07
Jackson, Jr., Jerome
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
357 22, 357 2312, 250211J, H01L 2714, H01L 3100, H01L 2976
Patent
active
051032805
ABSTRACT:
A photoconductive semiconductor device having a source, a drain, and a photosensitive channel therebetween. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide.
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Boos J. Bradley
Papanicolaou Nicolas A.
Thompson Phillip E.
Jackson, Jr. Jerome
McDonnell Thomas E.
Miles Edward F.
The United States of America as represented by the Secretary of
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