Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1996-01-11
1998-08-18
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429834, 20429839, 118723E, 156345, C23C 1434, C23C 1600, C23F 102
Patent
active
057954526
ABSTRACT:
A dry process system comprising a chamber having an inlet for reaction gas and an exhaust port for exhaust gas, at least one pair of electrodes connected with an alternating current power source through a blocking capacitor, respectively, and one or more magnetic field applying means for generating a magnetic field nearly parallel to a surface of each electrode. The distance between adjacent electrodes is set to the extent that electrons can travel nearly without collision in the space between the adjacent electrodes. Since the distance between adjacent electrodes is narrow, one plasma generated in the neighborhood of one of the adjacent electrode and the other plasma generated in the neighborhood of another electrode can commingle with each other so that the distribution of plasma is made nearly equal, thus a nearly uniform plasma can be formed without a rotating magnetic field.
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Kinoshita Haruhisa
Matsumoto Osamu
Sakuma Harunobu
Kokusai Electric Co. Ltd.
Nguyen Nam
O'Reilly David
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