Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1987-06-15
1989-06-27
Nguyen, Nam X.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
156345, 20419212, C23C 1434
Patent
active
048427071
ABSTRACT:
In a dry process apparatus comprising a reactor, a first and a second electrodes mounted inside the reactor, the first electrode being provided to mount a material to be processed thereon, and a high-frequency power supply electrically connected to the first or the second electrode to create an alternating electric field, a permanent magnet in the form of a ring with an N-pole and an S-pole is provided to generate a magnetic field that interacts with the alternating electric field to induce a magnetron discharge in the space above the material to be processed.
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Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 495-498, "Magnetron-Plasma CVD System and Its Application to Aluminum Film Deposition," Kato et al.
Nguyen Nam X.
OKI Electric Industry Co., Ltd.
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