Dry method for cleaning semiconductor substrate

Details Dry method for cleaning semiconductor substrate Dry method for cleaning semiconductor substrate

1995-07-20

1997-07-22

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 26, B08B 700

Patent

active

056500157

ABSTRACT:
A method is presented for cleaning of metallic surface contaminants from the surfaces of semiconductor substrate in semiconductor device manufacturing. The method is a dry method and avoids many of the problems introduced by the conventional wet method of cleaning while achieving a level of cleanliness better than the wet method. The method involves halogenizing the contaminants by exposing the wafers to a gas containing a halogen gas to form halogenized compounds of the contaminants. This is followed by a process of exposing the halogenized compounds to a gas containing .beta.-diketone so as to convert the halogenized compounds to .beta.-diketone complexes to enable highly efficient removal of the metallic surface contaminants by vaporization.

REFERENCES:
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patent: 5332444 (1994-07-01), George et al.
patent: 5368687 (1994-11-01), Sandhu et al.
Patent Abstracts of Japan vol. 18, No. 372 (E-1577) (6712) Jul. 13, 1994.
Kern and Puotinen, "Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology", RCA Review, vol. 31, No. 2, Jun. 1970, pp. 187-205.
Ito and Sugino, Semiconductor World, vol. 3, 1989, pp. 120-123.

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