Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-10-25
1999-12-28
Codd, Bernard
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438711, 438712, 438720, 438728, 438734, 216 67, 216 68, 216 69, 216 72, 216 77, 156345, H01L 213065
Patent
active
060081325
ABSTRACT:
A wafer having an interlayer insulating film on a silicon substrate and an Al alloy layer on the interlayer insulating film coated with a resist pattern is introduced into an etching chamber where the Al alloy layer is selectively etched in etchant gas plasma. A main etching process is performed under the etching conditions of a high plasma density until the interlayer insulating film 12 is exposed, and a succeeding over etching process is performed under the etching conditions of a low plasma density. A dry etching method and system is provided which can suppress generation of an abnormal shape or notch of a wiring pattern etched in low pressure and high density plasma, without sacrificing etching selectivity and with productivity being maintained high.
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Codd Bernard
Yamaha Corporation
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