Dry etching process and a fabrication process of a semiconductor

Details Dry etching process and a fabrication process of a semiconductor Dry etching process and a fabrication process of a semiconductor

1999-05-26

2000-10-24

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438723, 438724, 438744, H01L 2100

Patent

active

061367230

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a resist pattern on a conductor layer, exposing the resist pattern to any of a plasma of a rare gas, a plasma of a mixture of a rare gas and a fluorine-containing gas, and a plasma of N.sub.2, and applying a dry etching process to the conductor layer while using the resist pattern as a mask.

REFERENCES:
patent: 5807790 (1998-09-01), Gupta et al.
patent: 5920796 (1999-07-01), Wang et al.

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