Dry etching method of a silicon thin film

Details Dry etching method of a silicon thin film Dry etching method of a silicon thin film

1998-07-21

2000-10-17

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438689, 438735, H01L 21302

Patent

active

061331570

ABSTRACT:
In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.

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