Dry etching method, method of fabricating semiconductor device,

Details Dry etching method, method of fabricating semiconductor device, Dry etching method, method of fabricating semiconductor device,

1995-09-28

1998-03-03

Niebling, John

Fishing, trapping, and vermin destroying

1566461, 1566501, 1566511, H01L 21465

Patent

active

057233667

ABSTRACT:
A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.

REFERENCES:
patent: 5318664 (1994-06-01), Saia

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