Dry etching method for refractory metals, refractory metal silic

Details Dry etching method for refractory metals, refractory metal silic Dry etching method for refractory metals, refractory metal silic

1991-01-17

1992-09-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437200, 437245, 148DIG147, 156643, 156656, H01L 2100, H01L 2102, H01L 21205, H01L 21263

Patent

active

051438666

ABSTRACT:
A dry etching method for refractory metal or its compound uses a mixed gas of an etchant gas for etching said refractory metal and a deposit gas for depositing said refractory metal. Halide of the etched refractory metal is used as the deposit gas. By using such a mixed gas, the refractory metal is etched at a portion where ion assist is strong, while the refractory metal is deposited at a portion where the ion assist is weak. In the dry etching, the ion mostly hits the surface of the object facing against the anode and hence the ion assist is strong, while the ion assist is weak at the side wall. Accordingly, the refractory metal is etched at the bottom surface of an etched groove, but at the side wall of the groove the refractory metal is deposited. This deposited metal protects the side wall from side etching. Therefore a fine pattern having a high aspect ratio etching is achieved.

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patent: 4713141 (1987-12-01), Tsang
Chow, T., Plasma Etching of Refractory Gates for VLSI Applications, Journ. of Electrochem. Soc., vol. 131, No. 10, (1984), pp. 2326-2335.
Degenkolb, Selective Dry Etching of Tungsten for VLSI Metallization, Journ. of Electrochem. Soc., vol. 85, No. 1, 1985, p. 353.

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