Dry etching method for magnetic material

Etching a substrate: processes – Forming or treating article containing magnetically...

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C216S057000, C216S067000, C216S072000, C216S075000, C029S603180

Reissue Patent

active

RE040951

ABSTRACT:
A dry etching method in which a plasma of an etching gas is generated and a magnetic material is dry-etched using a mask material made of a non-organic material, wherein an alcohol having at least one hydroxyl group is used as the etching gas. The alcohol used as the etching gas has one hydroxyl group such as an alcohol selected from the group including methanol (CH3OH), ethanol (C2H5OH) and propanol (C3H7OH).

REFERENCES:
patent: 4687543 (1987-08-01), Bowker
patent: 5171411 (1992-12-01), Hillendahl et al.
patent: 5409738 (1995-04-01), Matsunuma et al.
patent: 5425844 (1995-06-01), Hirata
patent: 6238582 (2001-05-01), Williams et al.
patent: 6794297 (2004-09-01), Noda
patent: 6821907 (2004-11-01), Hwang et al.
patent: 6825156 (2004-11-01), Lee et al.
patent: 2002/0096493 (2002-07-01), Hattori
patent: 2003/0038106 (2003-02-01), Covington et al.
patent: 2003/0052079 (2003-03-01), Yoshioka et al.
patent: 2003/0170998 (2003-09-01), Mise et al.
patent: 2004/0222185 (2004-11-01), Kawai
patent: 08-253881 (1996-10-01), None
Formation of TMR element by etching using CH3OH, Feb. 10, 2004, http://anelva.co.jp/english
ews/products/mram.html.
Hawley's “Condensed Chemical Dictionary”, 14thEd. Published by John Wiley & Sons, Inc. 2001, p. 29.

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