Dry etching method for magnetic material

Etching a substrate: processes – Forming or treating article containing magnetically...

Reexamination Certificate

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C216S057000, C216S067000, C216S072000, C216S075000

Reexamination Certificate

active

07060194

ABSTRACT:
A dry etching method in which a plasma of an etching gas is generated and a magnetic material is dry-etched using a mask material made of a non-organic material, wherein an alcohol having at least one hydroxyl group is used as the etching gas. The alcohol used as the etching gas has one hydroxyl group such as an alcohol selected from the group including methanol (CH3OH), ethanol (C2H5OH) and propanol (C3H7OH).

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patent: 2003/0170998 (2003-09-01), Mise et al.
patent: 8-253881 (1996-10-01), None
Formation of TMR element by etching using CH3OH, Feb. 10, 2004, http://www.anelva.co.jp/english
ews/products/mram.html.

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