Dry etching method for aluminum alloy and etching gas therefor

Details Dry etching method for aluminum alloy and etching gas therefor Dry etching method for aluminum alloy and etching gas therefor

1997-01-22

1998-11-17

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438742, 252 792, H01L 21302

Patent

active

058376160

ABSTRACT:
In a dry etching method of aluminum (Al) alloy film comprising the steps of (1) forming an alloy film of which a major component is Al on a semiconductor substrate, (2) forming a resist pattern on the alloy film, and (3) dry etching the alloy film using the resist pattern as a mask with etching gas to which ammonia gas is added, a flow rate of the ammonia gas being set at between not less than half of a flow rate of the etching gas and not more than the flow rate of the etching gas. Improved fine pattern dry etching of Al alloy including Si and Cu is achieved.

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