Dry etching method, fine structure formation method, mold...

Details Dry etching method, fine structure formation method, mold... Dry etching method, fine structure formation method, mold...

2006-06-27

2010-06-08

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

C216S067000, C216S081000

Reexamination Certificate

active

07731862

ABSTRACT:
A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.

REFERENCES:
patent: 5298112 (1994-03-01), Hayasaka et al.
patent: 5772905 (1998-06-01), Chou
patent: 5814238 (1998-09-01), Ashby et al.
patent: 6015976 (2000-01-01), Hatakeyama et al.
patent: 6420095 (2002-07-01), Kawamura et al.
patent: 7309446 (2007-12-01), Kley
patent: 2003/0024902 (2003-02-01), Li et al.
patent: 2003/0038106 (2003-02-01), Covington et al.
patent: 2004/0224504 (2004-11-01), Gadgil
patent: 2005/0112901 (2005-05-01), Ji et al.
patent: 01-098229 (1989-04-01), None
patent: 07-218739 (1995-08-01), None
patent: 3152831 (2001-01-01), None
Chou, et al. “Imprint of sub-25 nm vias and trenched in polymers” Appl. Phys. Lett. Nov. 20, 1995, vol. 67, No. 21, pp. 3114-3116.
United States Office Action issued in U.S. Appl. No. 11/659,109, mailed Dec. 31, 2009.
United States Office Action issued in U.S. Appl. No. 11/659,107, mailed Dec. 31, 2009.
United States Office Action issued in U.S. Appl. No. 11/475,173, mailed Jan. 7, 2010.
United States Office Action issued in U.S. Appl. No. 11/475,173, mailed on Nov. 27, 2009.
United States Office Action issued in U.S. Appl. No. 11/475,173, mailed on Dec. 29, 2009.

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