Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2011-04-05
2011-04-05
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
C438S706000
Reexamination Certificate
active
07919005
ABSTRACT:
A WC substrate7is etched by using plasma50generated from a gas including a chlorine atom.
REFERENCES:
patent: 5298112 (1994-03-01), Hayasaka et al.
patent: 5650059 (1997-07-01), Shumaker et al.
patent: 5772905 (1998-06-01), Chou
patent: 5814238 (1998-09-01), Ashby et al.
patent: 6015976 (2000-01-01), Hatakeyama et al.
patent: 6156243 (2000-12-01), Kosuga et al.
patent: 6168737 (2001-01-01), Poco et al.
patent: 6358428 (2002-03-01), Leverenz et al.
patent: 6420095 (2002-07-01), Kawamura et al.
patent: 2002/0142230 (2002-10-01), Yan et al.
patent: 2003/0024902 (2003-02-01), Li et al.
patent: 2004/0224504 (2004-11-01), Gadgil
patent: 2005/0112901 (2005-05-01), Ji et al.
patent: 01-098229 (1989-04-01), None
patent: 02-094520 (1990-04-01), None
patent: 06-029253 (1994-02-01), None
patent: 06-188225 (1994-07-01), None
patent: 07-218739 (1995-08-01), None
patent: 07-221074 (1995-08-01), None
patent: 07-263426 (1995-10-01), None
patent: 07-335624 (1995-12-01), None
patent: 08-339987 (1996-12-01), None
patent: 10-337734 (1998-12-01), None
patent: 2002-025986 (2002-01-01), None
patent: 2004-039777 (2004-02-01), None
patent: 2004-268331 (2004-09-01), None
patent: 2005-026444 (2005-01-01), None
Chou, S. Y., et al. “Imprint of sub-25nm vias and trenches in polymers” Appl. Phys. Lett., Nov. 20, 1995, vol. 67, No. 21, pp. 3114-3116.
United States Office Action issued in U.S. Appl. No. 11/475,173 dated Nov. 27, 2009.
United States Office Action issued in U.S. Appl. No. 11/475,173 dated Jan. 7, 2010.
United States Office Action issued in U.S. Appl. No. 11/659,107 dated Dec. 31, 2009.
Murakami Tomoyasu
Nakagawa Hideo
Sasago Masaru
Lin Patti
McDermott Will & Emery LLP
Norton Nadine G
Panasonic Corporation
LandOfFree
Dry etching method, fine structure formation method, mold... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dry etching method, fine structure formation method, mold..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method, fine structure formation method, mold... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2736074