Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-07-18
2008-03-11
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S585000, C438S714000, C438S728000, C438S732000, C257SE21312, C216S069000, C216S070000
Reexamination Certificate
active
07341922
ABSTRACT:
When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.
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Niko Hideo
Yamaguchi Takao
Yamashita Takeshi
Lebentritt Michael
Nixon & Peabody LLP
Pompey Ron E
Studebaker Donald R.
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