Dry etching method, fabrication method for semiconductor...

Details Dry etching method, fabrication method for semiconductor... Dry etching method, fabrication method for semiconductor...

2006-12-12

2006-12-12

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C216S063000

Reexamination Certificate

active

07148151

ABSTRACT:
When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically, the application of the bias power is initiated before the application of source power is initiated. Alternatively, the source power and the bias power are applied such that the effective value of the source power reaches a second predetermined value after the effective value of the bias power reaches a first predetermined value.

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