Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-06-25
1998-06-16
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 67, 438723, 438724, H01L 2100
Patent
active
057670218
ABSTRACT:
In performing plasma etching or plasma CVD, a gas containing an interhalogen compound gas or a XeF.sub.2 gas is used as a process gas. Such a process gas generates, in the state of non-plasma and with activation energy lower than a specified level, a volatile material from a deposition species generated in the above etching so as to contribute to the suppression of film formation. For example, the XeF.sub.2 gas, a BrF.sub.3 gas, a BrCl gas are used in the cases of etching a silicon dioxide film, a silicide film, and a polysilicon film, respectively. On the surface of a substrate is formed a non-volatile protective film so as to improve the profiles of an opening. At the wall surface of a reaction chamber which is barely influenced by the plasma, the deposition species is turned into a volatile material (e.g., SiF.sub.4) so as to suppress the deposition of reaction products thereon. If the interhalogen compound gas, XeF.sub.2 gas, or the like is added to a main gas for performing CVD, the same effects can be achieved.
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Imai Shin-ichi
Tamaki Tokuhiko
Matsushita Electric - Industrial Co., Ltd.
Powell William
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