Dry etching method and semiconductor device manufacturing...

Details Dry etching method and semiconductor device manufacturing... Dry etching method and semiconductor device manufacturing...

2006-01-17

2006-01-17

Hiteshew, Felisa (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S709000

Reexamination Certificate

active

06987066

ABSTRACT:
A dry etching method comprises sequentially laminating a first insulating layer containing carbon and a second insulating layer containing carbon on a substrate, patterning the second insulating layer to form a mask; forming grooves in the first insulating layer by etching the first insulating layer with the second insulating layer used as a mask such that each of the grooves has a side surface and a bottom surface in the first insulating layer; and removing the second insulating layer by use of a reactive gas containing carbon atoms and at least one of oxygen atoms, hydrogen atoms and nitrogen atoms.

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“Notification of Reasons for Rejection,” Japan Patent Office, Jan. 27, 2005.

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